Royi New 0.9GHz 50W 830-919MHz GaN Jammer RF High Power Vco WiFi Jammer Anti Drone Module with Circulator for Anti-Drone

• Customization: Available
• Usage: Industry
• Call Type: Mixed
• Model NO.: YXA839147F
• Hardware Technology: RF
• Certification: ISO
• Condition: New
• Operating Temperature: -40ºC~150ºC
• Place of Origin: Chengdu
• Chipset: Standard
• Dimensions: 133.13 X70.86 X20mm
• Application: Drone Blocker
• Model Number: Yxa839147f
• Supplier Type: Manufacturer
• Type: RF Module
• Cooling System: Yes
• RF Connectors: SMA-F / SMA-F
• Frequency: 830-919 MHz
• Power Consumption: 50W
• Transport Package: Box
• Trademark: OEM
• Origin: China
• HS Code: 85437092
• Production Capacity: 500000

Product Description

DESCRIPTION
The YXA839147F is a 830 to 919 MHz amplifier which is guaranteed to deliver 100W minimum output power and related RF performance under all specified temperature and environmental conditions. This  LDMOS module is designed for commercial applications. It is capable of supporting any signal type and modulation format,The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small,lightweight package.

FEATURES
Overvoltage, Undervoltage, and Reverse Voltage Protection
High-Speed On/Off Control
Over-Temperature Protection
Overcurrent Protection
Optional Heatsink
50 ohm input/output impedance

 

Specifications subject to change without notice. Typical performance at  VDC +25oC,and in a 50Ω system.
 

PARAMETER	Symbol	MIN	TYP.	MAX	UNIT
Operating Frequency	BW	830		919	MHz
Psat	Pout	/	50	/	W
Gain	Gain	/	50	/	dB
Gain Flatness	GF	/	±0.5	/	dB
VSWR(Max)	VSWR	/	1.6	/	-
Operating Voltage	/	/	+28	/	V
Current Draw(Max)	/	/	4.5	/	A
Quiescent Current Draw	/	/	0.7	/	A
Dissipate heat	Optional Heat sink

Ordering information
 

Model Number	Description
YXA859547F	50W Amplifier ,Comes with built-in frequency scanning
YXA859550F	100W Amplifier ,Comes with built-in frequency scanning

Frequency: 830MHz - 919MHz
RFOUT POWER1: 48dBm (60W)
RFOUT POWER2: 47dBm (50W)
 

 GAN's chip has the following 3 advantages over LDMOS:

1. High work efficiency;

2. The use of ceramic tube shell enhances heat dissipation and greatly improves stability;

3. The open-circuit state will not burn out the chip;