Royi 1100-1300 MHz GaN Drone Sweep Signal Source for Anti-WiFi Drone High Power Vco for Blocking Drone Flying RF Power Amplifier Module for Uav

• Customization: Available
• Usage: Industry
• Call Type: Mixed
• Model NO.: YXA111347F
• Hardware Technology: RF
• Certification: ISO
• Condition: New
• Operating Temperature: -40ºC~150ºC
• Place of Origin: Chengdu
• Chipset: Standard
• Dimensions: 150 X 70 X20mm
• Application: Drone Blocker
• Model Number: Yxa111347f
• Supplier Type: Manufacturer
• Type: RF Module
• Cooling System: Yes
• RF Connectors: SMA-F / SMA-F
• Frequency: 1160-1280 MHz
• Power Consumption: 50W
• Transport Package: Box
• Trademark: OEM
• Origin: China
• HS Code: 85437092
• Production Capacity: 500000

Product Description

DESCRIPTION
This Class A LDMOS module is engineered for demanding commercial applications. It supports all signal types and modulation formats. Leveraging the latest device technologies and advanced design methodologies, the module delivers high power density, excellent efficiency, and outstanding linearity in a compact, lightweight package.

FEATURES
Overvoltage, Undervoltage, and Reverse Voltage Protection
High-Speed On/Off Control
Over-Temperature Protection
Overcurrent Protection
Optional Heatsink

 

Specifications subject to change without notice. Typical performance at  VDC +25oC,and in a 50Ω system.

RF / ELECTRICAL
PARAMETER	MIN	TYP.	MAX	UNIT
Operating Frequency	1100		1300	MHz
PSat Power Output		47.0		dBm
Gain		50.0		dB
Gain Flatness		±0.75		dB
VSWR(Max)		1.4
Operating Voltage		+28		VDC
Current Draw(Max)		4.5		A
Quiescent Current Draw		0.6		A
Switching Time		15		uS

Model Number	Description
YXA111347F	No Heat Sink Included
YXA111347FH	Heat Sink Included
YXA111347FVCO	Built-in VCO
YXA111350F	Psat 100 W
YXA111350FH	Psat 100 W, Heat Sink Included

Frequency: 1100MHz - 1300MHz
RFOUT POWER1: 48dBm (60W)
RFOUT POWER2: 47dBm (50W)
RFOUT POWER3: 46dBm (50W)
RFOUT POWER4: 45dBm (50W)
RFOUT POWER5: 43dBm (50W)
RFOUT POWER6: 40dBm (50W)

 GAN's chip has the following 3 advantages over LDMOS:

1. High work efficiency;

2. The use of ceramic tube shell enhances heat dissipation and greatly improves stability;

3. The open-circuit state will not burn out the chip;